Reliable circuit simulations require precise modeling of active and passive devices. For this the field of device characterization and modeling was established to extract the necessary parameters.
Modeling Experience
Our experience covers the modeling of
BJT
FET
HEMT
HBT
technologies, especially for high frequency applications. Furthermore we developed models to describe thermal effects on chip. We support common standard models as well as device specific models for unconventional technologies and applications. We are well-equipped with measurement instrumentation and are able to characterize devices up to 40 GHz on wafer. At present we are working on modeling of on-chip integrated sensor elements.
All activities are accessible to external customers to get their own models or model parameters of their devices.
