ASIC Foundry Services

ams 0.35 μm
PROTOTYPING AND VOLUME PRODUCTION

Through EUROPRACTICE-IC, customers from academia and industry can gain access to Multi-Project-Wafer runs and Volume Production services of ams.

The ams state-of-the-art 8-inch fab is offering high-performance process technologies with more than 30 years of experience in wafer processing. The PDK (Process Design Kit) provides all building blocks required to create complex analog mixed-signal designs.

The ams 0.35 µm technologies with standard CMOS, HV, SiGe and Opto Process, fabricated in Austria, offer affordable and easy access to prototyping and small volume services for academia and industry.

GLOBALFOUNDRIES 130, 55, 45, 40, 28, 22, 12 nm
PROTOTYPING AND VOLUME PRODUCTION

Through EUROPRACTICE-IC, customers from both academic and private sectors can access Multi-Project-Wafer and Volume Production services of GLOBALFOUNDRIES.

GLOBALFOUNDRIES, is a leading specialty foundry with a broad range of platforms and features, such as RF CMOS, FDSOI, RFSOI, SiGe, FinFET, SiPhotonics. Technology nodes are ranging from 350 nm down to 12 nm. Globalfoundries’ 22nm and 28nm nodes are fabricated in Dresden, Germany.

The GLOBALFOUNDRIES 22FDX^® employs 22 nm Fully Depleted Silicon-On-Insulator (FD-SOI) technology that delivers outstanding performance at extremely low power with the ability to operate at 0.4V ultra-low power and at 1pA per micron for ultra-low standby leakage.

IHP 0.25 and 0.13 μm
PROTOTYPING AND VOLUME PRODUCTION

EUROPRACTICE-IC provides access to IHP SiGe:C BiCMOS Technologies for Multi-Project-Wafer Prototyping and Small Volume Production.

IHP offers research partners and industrial customers worldwide access to its powerful SiGe:C BiCMOS technologies. Several generations of high-speed SiGe Hetero-junction Bipolar Transistors (HBT) have been developed and integrated in 0.25 μm and 0.13 μm BiCMOS technologies.

The 0.13 μm BiCMOS process SG13G2 represents the fastest currently available SiGe HBT technology featuring peak fT / fmax values of 300 GHz / 500 GHz. These IHP technologies are especially suited for applications in the higher GHz bands, e.g. for telecommunications & broadband, radar and more.  

G25H5_EPIC is the monolithic integration of photonic devices, such as detectors and modulators, in the frontend of a Si-based integrated circuit technology that allows shortest interconnects between photonics and electronics, from which high-speed performance of Electronic-Photonic Integrated Circuits (EPIC) greatly benefit. This technology is especially suited for Optical Transceivers for 100G / 200G / 400 GHz applications.

X-FAB 0.35, 0.18, 0.13 μm
PROTOTYPING AND VOLUME PRODUCTION

EUROPRACTICE-IC offers Multi-Project-Wafer and Volume Production services of X-FAB to academic institutions togetherwith small and medium-sized enterprises.

X-Fab is a leading foundry group for analog/mixed-signal semiconductor applications, with six manufacturing sites in Germany, France, Malaysia and the USA. X-FAB has a combined capacity of around 94,000 eight-inch equivalent wafer starts per month.

Technologies are ranging from 1.0 to 0.13 µm mixed-signal CMOS, special SOI and MEMS long lifetime processes for automotive, industrial, medical and other applications